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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1402 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) *High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ww w scs .i VALUE -120 V -120 V -7 V -3 A -6 A 2 W UNIT .cn mi e ICM Collector Current-Peak Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 25 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1402 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA B -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA B -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA B VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain VECF C-E Diode Forward Voltage w w scs .i w B IC= -3A; IB= -30mA VCB= -100V; IE= 0 VCE= -100V; RBE= .cn mi e 1000 -2.0 V -3.5 V A -10 -10 A IC= -1.5A; VCE= -3V 20000 IF= 3A 3.0 V isc Websitewww.iscsemi.cn 2 |
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